ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
권호 표지

An Etch-Stop Technique Using $Cr_2O_3$ Thin Film and Its Application to Silica PLC Platform Fabrication

  • Received : 2002.02.06
  • Published : 2002.10.31
Download PDF
⟨ Previous Next ⟩

Abstract

Using $Cr_2O_3$ thin film, we developed a novel etch-stop technique for the protection of silicon surface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 ${\mu}m$ without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lightwave circuit platforms for opto-electronic hybrid integration.

Keywords

References

  1. Opto-Electronic Hybrid Integration Platform, Optical Sub-Module, Opto-Electronic Hybrid Integration Circuit, and Process for Fabricating Platform Yamada, Y.;Mino, S.(et al.)
  2. IEEE Electronic Components and Technology Conf. Assembly and Wiring Technologies on PLC Platforms for Low-Cost and High-Speed Application Akahori, Y.;Ohyama, T.;Hashimoto, T.;Yamada, Y.