ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Breakdown Voltage Improvement of p-LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications

  • Received : 2002.03.02
  • Published : 2002.08.31
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Abstract

We investigated the electrical characteristics of p-channel double-diffused MOSFETs (p-LDMOSFETs) with an uneven racetrack source (URS) and a conventional racetrack source (CRS) for PDP driver IC applications. The breakdown voltage of the p-LDMOSFET with the URS in offstate was nearly the same as the p-LDMOSFET with the CRS. However, the breakdown voltage of the p-LDMOSFET with the URS in on-state was about 30% higher than that of the p-LDMOSFET with the CRS, while the saturated drain current of the p-LDMOSFET with the URS was only about 4% lower than that of the p-LDMOSFET with the CRS.

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References

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