Journal of Information Display
- Volume 2 Issue 3
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- Pages.72-77
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- 2001
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- 1598-0316(pISSN)
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- 2158-1606(eISSN)
Active-Matrix Cathodes though Integration of Amorphous Silicon Thin-Film Transistor with triode -and Diode-Type field Emitters
- Song, Yoon-Ho (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Cho, Young-Rae (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Hwang, Chi-Sun (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Kim, Bong-Chul (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Ahn, Seong-Deok (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Chung, Choong-Heui (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Kim, Do-Hyung (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Uhm, Hyun-Seok (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Lee, Jin-Ho (Advanced Micro-Electronics Tech. Lab., ETRI) ;
- Cho, Kyoung-Ik (Advanced Micro-Electronics Tech. Lab., ETRI)
- Published : 2001.09.30
Abstract
Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.
Keywords
- active-matrix field emission display;
- active-matrix cathode;
- field emitter;
- molybdenum tip;
- carbon nanotubes;
- amorphous silicon thin-film transistor