참고문헌
- K. Nagata, T. Matano, K. Sakakibara, K. Miyano, Y. Hoshino, S. Isa, and S. Nakazawa, '256Mbit Synchronous DRAM,' NEC Research & Development, vol. 38, no. 1, pp. 1-8, Jan. 1993
- J. Bernstein, Y. Hua, and W. Zhang, 'Laser Energy Limitation for Buried Metal Cuts,' IEEE Elec. Dev. Letters, vol. 19, no. 1, pp. 4-6, Jan. 1998 https://doi.org/10.1109/55.650334
- W. Zhang, J.-H. Lee, and J. B. Bernstein, 'Energy Effect of Laser-Induced Vertical Metallic Link,' IEEE Trans. on. Semiconductor Manufacturing, vol. 14, no. 2, pp. 163-169, May 2001 https://doi.org/10.1109/66.920728
- M. Alavi, M. Bohr, J. Hicks, M. Denham, A. Cassens, D. Douglas, and M. C. Tsai, 'A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process,' IEDM Technical Digest, pp 855-858, Dec. 1997 https://doi.org/10.1109/IEDM.1997.650515
- G. Zhang, C. Hu, P. Yu, S. Chiang, and E. Hamdy, 'Metal-to-Metal Antifuses with Very Thin Silicon Dioxide Films,' IEEE Elec. Dev. Letters, vol. 15, no. 8, pp 310-312, Aug. 1994 https://doi.org/10.1109/55.296226
- David J. Pilling, et al., 'Circuits for Improving The Reliability of Antifuses in Integrated Circuits,' U.S. patent number 5680360, Oct. 1997
- T. Takahashi, et al., 'A Multigigabit DRAM Technology with 6F2 Open-Bit Line Cell, Distributed Overdriven Sensing, and Stacked-Flash Fuse,' Journal of Solid-State Circuits, vol. 36, no. 11, pp. 1721-1727, 2001 https://doi.org/10.1109/4.962294
- T. Hamamoto et al., 'A Skew and Jitter Suppress DLL Architecture for high frequency DDR SDRAMs', in Symp. VLSI Circuits Dig. Tech. Papers, June 2000, pp.76-77 https://doi.org/10.1109/VLSIC.2000.852857
- S. Kuge et al., 'A 0.18um 256Mb DDR-SDRAM with Low-Cost Post-Mold-Tuning Method for DLL Replica' in ISSCC Dig. Tech. Papers, Feb. 2000, pp 402-403 https://doi.org/10.1109/ISSCC.2000.839834
- Todd A. Merritt, et al., 'On-Chip Program Voltage Generator for Antifuse Repair,' U.S. patent number 5604693, Feb. 1997
- J. S. Choi, J. K. Wee, P. J. Kim, J. K. Oh, C. H. Lee, H. Y. Cho, J. Y. Chung S. C. Kim, and W. Yang, 'Antifuse EPROM Circuit for Field Programmable DRAM,' Int'l Solid-State Circuits Conference Digest of Technical Papers, pp.406-407, Feb. 2000 https://doi.org/10.1109/ISSCC.2000.839836
- J. Wee, W. Yang, E. Ryou, J. Choi, S. Ahn, J. Chung, and S. Kim, 'An antifuse EPROM circuitry scheme for field-programmable repair in DRAM,' in IEEE Journal of Solid-State Circuits, vol. 35, no. 10, pp. 1408-1414, Oct. 2000 https://doi.org/10.1109/4.871316
- K. Min, J. Park, S. Lee, Y. Kim, T. Yang, J. Joo, K. Lee, J. Wee, and J. Chung, 'A post-package bit-repair scheme using static latches with bipolar-voltage programmable antifuse circuit for high-density DRAMs,' in Symposium on VLSI circuits Digest of Technical Papers, pp. 67-68, in Kyoto, Japan, June 2001 https://doi.org/10.1109/4.982432
- H. Koike, et al, '30ns 64Mb DRAM with Built-in Self-Test and Repair Function', in IEEE Int'l Solid-State Circuit Conf., San Francisco, pp.150-152, Feb. 1992 https://doi.org/10.1109/4.165332
- K. Lim, and et al, 'Bit Line Coupling Scheme and Electrical Fuse Circuit For Relaible Operation of High Density DRAM,' in Symp. VLSI Circuits Dig. Tech. Papers, June 2001, pp.33-34 https://doi.org/10.1109/VLSIC.2001.934186
- G.J. Gastan, I.G. Daniels, 'Efficient extraction of metal parasitic capacitances', Proc. IEEE Conference on Microelectronic test Structures, vol. 8, pp. 157-160, Mar. 1995 https://doi.org/10.1109/ICMTS.1995.513964
- H. Samavati, A. Hajimiri, A. Shahani, G. Nasserbarkht, T. Lee, 'Fractical capacitors', Int'l Solid-State Circuits Conference Digest of Technical Papers, pp. 256-257, Feb. 1998
- J. Dickson, 'On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique,' in IEEE Journal of Solid-State Circuits, vol. 11, pp. 374-378, June 1976
- Y. Tsukikawa, T. Kajimoto, Y. Okasaka, Y. Morooka, K. Furutani, H. Miyamoto, and H. Ozaki, 'An efficient back-bias generator with hybrid pumping circuit for 1.5-V DRAM's,' in IEEE Journal of Solid-State Circuits, vol. 29, no. 4, pp. 534-538, April 1994
- D. J. Culter K. D. Beigel, 'Semiconductor Junction Antifuse circuit,' U.S. patent number 644, 232, May 1996