Transactions on Electrical and Electronic Materials
- 제2권2호
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- Pages.16-20
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- 2001
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
Optoelectronic Characteristics of Hydrogen and Oxygen Annealed Si-O Superlattice Diode
초록
Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550