Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects on Heat Treatment Methods in Indium-Tin-Oxide Films by DC Magnetron Sputter of Powder Target

  • Kim, H.H. (Electronic Department, Doowon Institute of Technology) ;
  • Shin, J.H. (Optical and Electronic materials Division, Agency for Technology and Standards) ;
  • Baek, J.Y. (Optical and Electronic materials Division, Agency for Technology and Standards) ;
  • Shin, S.H. (Optical and Electronic materials Division, Agency for Technology and Standards) ;
  • Park, K.J. (Optical and Electronic materials Division, Agency for Technology and Standards)
  • Published : 2001.03.01
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Abstract

ITO (Indium-tin-oxide) thin films were deposited on glass substrates by a dc magnetron sputtering system using ITO powder target. The methods of heat treatment are important factor to obtain high quality ITO films with low electrical resistivity and good optical transmittance. Therefore, both methods of the substrate temperature and post-deposition annealing temperature have been compared on the film structural, electrical and optical properties. A preferred orientations shifts from (411) to (222) peak at annealing temperature of 200$\^{C}$. Minimum resistivity of ITO film is approximately 8.7$\times$10$\^$-4/ Ωcm at substrate temperature of 450$\^{C}$. Optical transmittances at post annealing temperature above 200$\^{C}$ are 90%. As a result, the minimum value of annealing temperature that is required for the recrystallization of as-deposited ITo thin films is 200$\^{C}$.

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