Micromachinng and Fabrication of Thin Filmes for MEMS-infrarad Detectors

  • Hoang, Geun-Chang (Division of Physics, Wonkwang Univ.) ;
  • Yom, Snag-Seop (Electronic Materials and Device Research Center, Korea Institute of Science and Technology) ;
  • Park, Heung-Woo (Electronic Materials and Device Research Center, Korea Institute of Science and Technology) ;
  • Park, Yun-Kwon (Electronic Materials and Device Research Center, Korea Institute of Science and Technology) ;
  • Ju, Byeong-Kwon (Electronic Materials and Device Research Center, Korea Institute of Science and Technology) ;
  • Oh, Young-Jei (Electronic Materials and Device Research Center, Korea Institute of Science and Technology) ;
  • Lee, Jong-Hoon (Electronic Materials and Device Research Center, Korea Institute of Science and Technology) ;
  • Moonkyo Chung (Electronic Materials and Device Research Center, Korea Institute of Science and Technology) ;
  • Suh, Sang-Hee (Electronic Materials and Device Research Center, Korea Institute of Science and Technology)
  • Published : 2001.03.01

Abstract

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.

Keywords

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