Comparison of the Existing Wet Etching and the Dry Etching with the ICP Process Method

새로운 ICP 장치를 이용한 고온 초전도체의 Dry Etching과 기존의 Wet Etching 기술과의 비교

  • 강형곤 (전북대학교 전기공학과) ;
  • 임성훈 (전북대학교 전기공학과) ;
  • 임연호 (전북대학교 화학공학과) ;
  • 한윤봉 (전북대학교 화학공학과) ;
  • 황종선 (전남도립 담양대학교 전기전자공학부) ;
  • 한병성 (전북대학교 전기공학과)
  • Published : 2001.02.01

Abstract

In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

Keywords

References

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