The Korean Journal of Ceramics

한국세라믹학회 (The Korean Ceramic Society)
권호 표지

RF-enhanced DC-magnetron Sputtering of Indium Tin Oxide

  • Futagami, Toshiro (Now with Osaka National Research Institute) ;
  • Kamei, Masayuki (Now with National Institute for Research in Inorganic Materials) ;
  • Yasui, Itaru (Institute of Industrial Science, University of Tokyo) ;
  • Shigesato, Yuzo (College of Science and Engineering, Aoyama Gakuin University)
  • 발행 : 2001.03.01
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초록

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

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참고문헌

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