한국광학회지 (Korean Journal of Optics and Photonics)

  • 제12권1호
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  • Pages.40-47
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  • 2001
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  • 1225-6285(pISSN)
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  • 2287-321X(eISSN)
한국광학회 (Optical Society of Korea)
권호 표지

1.55 $1.55{\mu}m$ InGaAsP/InGaAsP MQW 광흡수 변조기에서 구조변수가 소광특성에 미치는 영향

Structural dependences of the extinction in an 1.55 $1.55{\mu}m$ InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator

  • 발행 : 2001.02.01
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초록

초고속 디지털 광통신용 $1.55{\mu}m$ InGaAsP/InGaAsP MQW 광흡수 변조기에서 각종 구조변수들이 광흡수변조기 성능에 미치는 영향을 체계적으로 조사분석하였다. 일반적으로 행하여지는 양자우물 수 $N_w$, 양자우물 두께 $t_w$, detuning 양 $\Delta\lambda$, 소자길이 L과 같은 구조 파라미터들에 더불어 본 연구에서 새롭게 제안한 SCH 영역내에 n형으로 도핑된 길이 $t_n$가 소자 성능에 미치는 영향을 해석하였다 이를 통해 소자길이 L=$100{\mu}m$의 광흡수변조기에서 구동 전압 $V_{\alpha}$=0~-2V 영역에서 동작하고 기초흡수 -1.5dB 이하, -1V에서 -2.92dB 및 -2V에서 -10.0dB 이상의 소광비를 주는 우수한 성능을 갖는 초고속 광흡수 변조기 설계가 가능하였다.

The structural dependence of the performance of an 1.55 $1.55{\mu}m$ InGaAsPIInGaAsP MQW electro-absorption modulator for highspeed digital fiber communication was systematically investigated. The effects of n-doped SCH region length $t_n$ as well as the general structure parameters including quantum well number $N_w$, well-thickness $t_w$, detuning wavelength $\Delta\lambda$, and device length L were thoroughly analyzed. Thereby, a high-pelfoIDlance electro-absorption modulator with device length L of $100{\mu}m$ was successfully designed. The designed structure showed excellent characteristics that have residual loss less than -1.5 dB, operational voltage from 0 V to -2V, and extinction ratios of -2.92 dB at $V_{\alpha}$=-1 V and -10 dB at $V_{\alpha}$=-2V.X>=-2V.

키워드

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