The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Dielectric Properties of P(VDF/TrFE) Thin Films Prepared by Vapor Deposition Method

진공증착법으로 제조된 P(VDF/TrFE) 박막의 유전특성

  • 정무영 (인하대 공대 전기공학과) ;
  • 윤종현 (인하대 공대 전기공학과) ;
  • 이선우 (인하대 공대 정기 공학과) ;
  • 박수홍 (인하대 공대 정기공학과(공박)) ;
  • 유도현 (안산공과대 전기과(공박)) ;
  • 이덕출 (인하대 공대 전기공학과(공박))
  • Published : 2001.01.01
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Abstract

P(VDF/TrFE) copolymer thin films with 70/30 and 80/20 mol% VDF (polyvinylidene fluoride) and TrFE (trifluoroethylene) rates were prepared by using a vapor deposition method, During thin films were prepared, the substrate temperatures were maintained at 30 $^{\circ}C$ and 120 $^{\circ}C$, and the heating source temperature was fixed at 350 $^{\circ}C$. Contary to PVDF homopolymer, P(VDF/TrFE) copolymers showed the Curie point(Tc) below the melting point. The Curie point (Tc) and the melting point of the P(VDF/TrFE) copolymers were changed as a function of substrate temperature and the VDF mol%. The Curie point and the melting point of P(VDF/TreFE) thin films decreased and increased with increasing substrate temperature, respectively. Also with increasing VDF mol%, the melting point decreased slightly, however the Curie point increased.

Keywords

References

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