대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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전자주입에 의해 야기되는 MOS 소자의 전류-전압 특성 분석

Analysis of Current-Voltage Characteristics Caused by Electron Injection in Metal-Oxide-Semiconductor Devices

  • 전현구 (成均館大學校 電氣電子 및 컴퓨터 工學部) ;
  • 최성우 (成均館大學校 電氣電子 및 컴퓨터 工學部) ;
  • 안병철 (成均館大學校 電氣電子 및 컴퓨터 工學部) ;
  • 노용한 (成均館大學校 電氣電子 및 컴퓨터 工學部)
  • Jeon Hyun-Goo (Sungkyunkwan University, School of Electrial and Computer Engineering) ;
  • Choi, Sung-Woo (Sungkyunkwan University, School of Electrial and Computer Engineering) ;
  • Ahn, Byung-Chul (Sungkyunkwan University, School of Electrial and Computer Engineering) ;
  • Roh, Yong-Han (Sungkyunkwan University, School of Electrial and Computer Engineering)
  • 발행 : 2000.11.01
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초록

금속-산화막-반도체 소자의 산화막에 존재하는 느린 준위에 의한 전류반응 특성을 양방향 전류-전압 측정기술을 적용하여 분석하였다. 게이트 바이어스에 따라 나타나는 충전 및 방전시의 순간전류를 유지시간, 지연시간, 전자주입 방향 및 전자주입량, 그리고 전자 주입후 상온 방치시간의 함수로서 조사하였다. 느린 준위의 전하교환에 따른 전류 성분을 게이트 전압에 따라 실리콘 내 캐리어의 이동에 의해 나타나는 변위전류와 분리하여 해석하였다. 충전 및 방전시 나타나는 전하교환 전류는 산화막내 정전하 밀도뿐만 아니라 계면준위 밀도에도 크게 의존이 되며, 본 연구에서는 느린 준위의 전하교환 메카니즘을 제시하였다.

A simple two-terminal cyclic current0voltage(I-V) technique was used to measure the current-transients in metal-oxide-semiconductor capacitors. Distinct charging/discharging currents were measured and analyzed as a function of the hold time, the delay time, the gate polarity during the FNT electron injection, the injection fluence and the annealing time after the injection had stopped. The charge-exchange current was distinguished from total current-transients containing the displacement current components. Charging/discharging current caused by the charge exchange was strongly dependent not only on the density of positive charges in the $SiO_2$, but also on the density of interface traps generated during the FNT electron injection. Several tentative mechanisms were suggested.

키워드

참고문헌

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