The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Fabrication and Electrical Properties of SCT thin Film with Substitution Contents of Ca

Ca 치환량에 따른 SCT 박막의 제조 및 전기적 특성

  • Published : 2000.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also the composition of SCT thin films were closed to stoichiometry(1.081∼1.117 in A/B/ ratio). The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80∼+90[^${\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 2000[kHz]. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increase.

Keywords

References

  1. SUSUMU NISHIGAKI, KANJI MURANO et al., 'Dielectric Properties of Ceramics in the system $(Sr_{0.5}Pb_{0.25}Ca_{0.25})TiO_3-Bi_2O_33TiO_2$ and Their Applications', J. Am. Ceram. Soc., Vol. 65(11), pp. 554-560, 1982 https://doi.org/10.1111/j.1151-2916.1982.tb10781.x
  2. D. W. Hoffman, and J. A. Thorton, 'Internal Stresses in Cr, Mo, Ta, and Pt Films Deposited by Sputtering from a Planar Magnetron Sources', J. Vac. Sci.&Technol., Vol. 20(3), pp. 355-358, 1982 https://doi.org/10.1116/1.571463
  3. L. P. Cook, M. D. Vaudin et al., 'Microstructural Changes during Processing of Laser Deposited $BaTiO_3$ and PZT Thin films', MRS Symposium Proceeding, Vol. 202, pp. 241-245, 1991
  4. Z. Surowiak., A. M. Margolin., I. N. Zaharochenoko and S. V. Biryukov, 'The Influence of Structure on the Piezoelectric properties of $BaTiO_3$ and $(BaSr)TiO_3$ Thin Films with a Diffuse Phase Transition', Thin Solid Films, Vol. 176, pp. 227-246, 1989 https://doi.org/10.1016/0040-6090(89)90096-5
  5. ニュ-ケラスシリ―ス 編集委員會 編, '半導體 ヒラミクスとその應用', ニユケラス ⑦, 學獻社, pp. 222-227, 1990
  6. J. M. Herbert, 'Ceramic Dielectrics and Capacitors', Gordon and Breach Science Publishers, pp. 202-209, 1985
  7. H. E. Weaver, 'Dielectric Properties of Single Crystals of $SrTiO_3$ at Low Temperatures', J. Phys. Chem. Solids., Vol. 11, p. 274, 1959 https://doi.org/10.1016/0022-3697(59)90226-4
  8. R. Wernicke, 'Two-Layer Model Explaining the properties of $SrTiO_3$ Boundary Layer Capacitior', Advances in Ceramics, Vol. 1, pp. 272-281, 1981
  9. R. Wernicke, 'Two-Layer Model Explaining the Properties of $SrTiO_3$ Boundary Layer Capacitior', Advances in Ceramics, Vol. 1, pp. 272-281, Edited by L. M. Levinson and D. C. Hill, 1981
  10. W. Johnson, L.E. Cross, F.A. Hummel, 'Dielectric Relaxation in Strontium Titanates Containing Rare-Earth Lons', J. Appl. Phys., Vol. 41, pp. 2828-2833, 1970 https://doi.org/10.1063/1.1659323
  11. A. Okada, 'Electrical properties of Lead-Zirconate-Lead-Titanate Ferroelectric thin Films and Their Composition Analysis by Auger Electron Spectroscopy', J. Appl. Phys., Vol. 49, pp 4495-4499, 1978 https://doi.org/10.1063/1.325455
  12. Tae Song Kim, Chong Hee Kim and Myung Hwan Oh, 'Electrical properties of radio frequency magnetron-sputtered $(BaSr)TiO_3$ thin films on indium thin oxide-coated glass substrate', J. Vac. Sci. Technol. A, Vol. 12, No. 2, pp. 529-532, 1994 https://doi.org/10.1116/1.579163
  13. A. N. Gubkin, A. J. Kashtanova, G. I. Skanavi, 'Dielectric Properties of Strontium Bismuth Titanates at Low Temperature', Fiz. Tverd. Teia., Vol. 34, pp. 1110-1116, 1961
  14. Shigeru waku et al., 'Classification and Dielectrics of the Boundary Layer Ceramic Dielectrics', Rev. Elect. Commun. Lab., Vol. 19, pp. 665-679, 1971