Journal of Korean Vacuum Science & Technology
- 제4권1호
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- Pages.11-17
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- 2000
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- 1226-6167(pISSN)
Low temperature electron mobility property in Si/$Si_{1-x}Ge_{x}$ modulation doped quantum well structure with thermally grown oxide
- Kim, Jin-Young (Department of Electronic Materials Engineering, Kwangwoon University)
- 발행 : 2000.03.01
초록
The low temperature electron mobilities were investigated in Si/
키워드