Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Enhancement of Electrical Conductivity of Copper Thin Films Prepared by CVD Technology

화학적기상증착법에 의한 구리박막의 전기전도도 개선에 관한 연구

  • 조남인 (선문대학교 전자정보통신공학부) ;
  • 김용석 (선문대학교 물리학과) ;
  • 김창교 (순천향대학교 정보기술공학부)
  • Published : 2000.06.01
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Abstract

For the applications in the ultra-large-scale-integration (ULSI) metallization processing copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on TiN/Si substrates. The films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were then annealed in a vacuum condition after the deposition and the annealing effect to the electrical conductivity of the films was measured. The grain size and the crystallinity of the films were observed to be increased by the post annealing and the electrical conductivity was also increased. The best electrical property of the copper film was obtained by in-situ annealing treatment at above 40$0^{\circ}C$ for the sample prepared at 18$0^{\circ}C$ of the substrate temperature.

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References

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