한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)
- 제13권11호
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- Pages.895-900
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- 2000
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- 1226-7945(pISSN)
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- 2288-3258(eISSN)
GaAs MESFET의 정전용량에 관한 특성 연구
C-V Characteristics of GaAs MESFETs
초록
In this paper, C-V characteristics based on the structure of GaAs MESFET’s has been proposed with wide range of applied voltages and temperatures. Small signal capacitance; gate-source and gate-drain capacitances are represented by analytical expressions which are classified into two different regions; linear and saturation regions with bias voltages. The expression contains two variables; the built-in voltage(
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