대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Pd- 및 Pt-SiC 쇼트키 다이오드의 수소가스 감지 특성

Hydrogen-Sensing Behaviors of Pd- and Pt-SiC Schottky Diodes

  • 김창교 (순천향대 정보기술공학부) ;
  • 이주헌 (순천향대 정보기술공학부 석사) ;
  • 조남인 (선문대 전자공학과) ;
  • 홍진수 (순천향대 정보물리학과)
  • Kim, Chang-Kyo (Dept.of Information Technology Engineering, Soonchungyang University) ;
  • Lee, Joo-Hun (Dept.of Information Technology Engineering, Soonchungyang University) ;
  • Cho, Nam-In (Department of Electronics Engineering and Center for Science and Advanced Technology) ;
  • Hong, Jin-Soo (Soonchungyang University)
  • 발행 : 2000.07.01
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초록

Hydrogen-sensing behaviors of Pd- and Pt-SiC Schottky diodes, fabricated on the same SiC substrate, have been systematically compared and analyzed as a function of hydrogen concentration and temperature by I-V and$\DeltaI-t$ methods under steady-state and transient conditions. The effects of hydrogen adsorption on the device parameters such as the barrier height are investigated. The significant differences in their hydrogen sensing characteristics have been examined in terms of sensitivity limit, linearity of response, response rate, and response time. For the investigated temperature range, Pd-SiC Schottky diode shows better performance for H2 detection than Pt-SiC Schottky diode under the same testing conditions. The physical and chemical mechanisms responsible for hydrogen detection are discussed. Analysis of the steady-state reaction kinetics using I-V method confirmed that the atomistic hydrogen process is responsible for the barrier height change in the diodes.

키워드

참고문헌

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