대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

실리콘 전력 MOSFET의 온도에 따른 항복전압 및 On 저항

Temperature Dependent Breakdown Voltage and On-resistance of Si Power MOSFETs

  • 발행 : 2000.04.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Closed-form expressions for the temperature dependent breakdown voltage and the on-resistance of the Si power MOSFETs were derived by employing effective temperature dependent ionization coefficient for electrons and holes. The breakdown voltage increases by 20% and the on-resistance increases 2 times when the temperature increases from 300 K to 423 K. The analytic results normalized to the values at 300 K show good agreement with the experimental data of Motorola within 3.5% and 7% for the breakdown voltage and the on-resistance, respectively.

키워드

참고문헌

  1. W. Fulop, 'Calculation of avalanche breakdown voltages of silicon p-n junctions,' Solid-St. Electron. Vol. 10, pp. 39-40, 1967 https://doi.org/10.1016/0038-1101(67)90111-6
  2. C. Hu, ' A parametric study of power MOSFETs,' Record of IEEE Power Electronics Specialists Conference, pp. 385-395, June 1979
  3. Y. Okuto and C. R. Crowell, 'Threshold energy effect on avalanche breakdown voltage in semiconductor junction,' Solid-St. Electron. Vol. 18, pp. 161-168, 1975 https://doi.org/10.1016/0038-1101(75)90099-4
  4. Motorola Inc., TMOS power MOSFET transistor device data, 1994
  5. R. Hall, 'Temperature coefficient of the breakdown voltage of Si p-n junctions,' Int. J. Electron., Vol. 22, pp. 513, 1967
  6. C. Canali et al., 'Electron drift velocity in silicon,' Phys. Rev., Vol. B12, pp. 2265-2284, 1975 https://doi.org/10.1103/PhysRevB.12.2265
  7. B. J. Baliga, Power Semiconductor Devices, PWS, 1996