The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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UV Emission Characterization of ZnO Thin Films Depending on the Variation of Oxygen Pressure

분위기 산소압변화에 따른 ZnO박막의 UV발광 특성분석

  • Published : 2000.02.01
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Abstract

ZnO is a wide-bandgap II-IV semiconductor and has a variety of potnetial applications. ZnO exhibits good piezoelectric, photoelectric and optical properties, and is a good candidate for an electroluminescence device. ZnO films have been deposited on (001) sapphire by PLD technique. Nd:YAG pulsed laser was operated at a wavelength of $\lambda=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C\; to\;700^{\circ}C$ films showed strong UV emission by increasing the partial oxygen pressure. We have investigated the relationship between partial oxygen pressure and the intensity of UV emission.

Keywords

References

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