한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제32권3호
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- Pages.303-306
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- 1999
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
EFFECT OF SUBSTRATE BIAS ON THE DIAMOND GROWTH USING MICROWAVE PLASMA CVD
- Sakamoto, Yukihiro (Chiba Institute of Technology, Precision Engineering) ;
- Takaya, Matsufumi (Chiba Institute of Technology, Precision Engineering)
- 발행 : 1999.06.01
초록
On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using