Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 32 Issue 2
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- Pages.93-99
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- 1999
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
Investigation of the residue formed on the silicon exposed to $C_4$ F$_8$ helicon wave plasmas
고선택비 산화막 식각공정시 $C_4$ F$_8$ 헬리콘 웨이브 플라즈마에 노출된 실리콘 표면의 잔류막 관찰
Abstract
Surface polymer layer formed on the silicon wafer during the oxide overetching using
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