한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제32권2호
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- Pages.83-92
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- 1999
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
유도 결합형 Cl$_2$ 계 플라즈마를 이용한 GaN 식각 특성에 관한 연구
A study of the GaN etch properties using inductively coupled Cl$_2$ -based plasmas
초록
GaN etching was performed using planar inductively coupled
키워드