Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 6 Issue 2
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- Pages.23-30
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- 1999
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Residual Stress Behavior of High Temperature Polyimide Thin Films depending on the Structural Isomers of Diamine
Diamine의 구조적 이성질체에 따른 내열성 폴리이미드 박막의 잔류응력거동
Abstract
The relationships between morphological structures and residual stress behaviors of polyimide thin films depending on isomeric diamines were investigated. For this study, Poly(phenylene biphenyltetracarboximide) (BPDA-PDA) and poly(oxydiphenylene biphenyltetracarboximide) (BPDA-ODA) films were prepared from their isomeric diamines: 1,3-phenylene diamine (1,3-PDA) 1,4-phenylene diamine (1.4-PDA), 3,4'-oxydiphenylene diamine (3,4'-ODA), and 4,4'-oxydiphenylene diamine (4,4'-ODA), respectively. For those films, residual stresses were detected in-situ during thermal imidization of the isomeric polyimide as a function of processing temperature over the range of 25~
이성질체에 따른 폴리이미드 박막의 잔류응력 영향과 모폴로지와의 상관관계가 조사되었다. 이를 위해, Poly(phenylene biphenyltetracarboximide) (BPDA-PDA)와 poly (oxydiphenylene biphenyltetracar-boximide) (BPDA-ODA)를 여러 다른 diamine인 1, 3-phenylene diamine (1, 3-PDA), 1.4-phenylene diamine (1,4-PDA)과 3.4'-oxydiphenylene diamine (3,4'-ODA) , 4,4'-oxydiphenylene diamine (4.4'-ODA)으로부터 제조하였다. 이들 박막에 대하여, Thin Film Stress Analyzer (TFSA)를 이용하여 공정온도 (25~
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