Hot-wall epitaxy에 의한 Zn-chalcogenide 에피층의 성장 및 구조적 특성

Growth of Zn-chalcogenide epilayers by hot-wall epitaxy and their structural properties

ZnS and ZnTe epilayers were grown on GaAs(100) GaP(100) substrates by hot-wall eitaxy. X-ray diffraction revealed that the epilayers have zinc-blende structure and were grown in (100) direction. The small values of the full width at half maximum (FWHM) of double crystal rocking curve (DCRC) showed high quality of the epilayers. From the thickness dependence of the FWHM of DCRC, the strain remaining in films is found to be due to the thermal expansion difference as well as due to the lattice mismatch.