References
- IEEE Electron Devices v.ED-34 The Impact of Intrinsic Series Resistance on MOSFET Scaling K. K. Ng;W.T. Lynch
- IEEE Trans. Electron Devices. v.38 Comparison of Transformation to Low-resistivity Phase and Agglomeration of TiSi₂and CoSi₂ J.B. Lasky;J.S. Nakos;O.J. Kain;P.J. Geiss
- The Electrochem. Soc. Ext. Abs. v.89-1 S.J. Hillenius;H.I. Cong;J. Lebowitz;J.M. Andrews;R.L. Field;L. Manchanda;W.S. Lindenberger;D.M. Boulin;W.T. Lynch
- IEDM Tech. Dig. An Advanced BiCMOS Process Utilizing Ultra Thin Silicon Epitaxy over Arsenic Buried Layers M.EI-Diwany;J. Borland;J. Chen;S. Hu;P.V. Wijnen;C. Vorst;V. Akylas;M. Brassington;R. Razuok
- Silicon Processing for VLSI Era v.2 S. Wolf
- IEEE Trans. Electron Devices v.ED-34 L. Van den Hove;R. Wolster;K. Maex;R.F. de Keersmaecker;G.J. Declerck
- Microelectron. Eng. v.19 R. Schreutelkamp;B. Deweerdt;R. Verbeeck;K. Maex
- J. Appl. Phys. v.68 no.3 Recrystallization and Grain Growth Phenomena in Polycrystalline Si/CoSi₂ Thin Film Couples S.Nygren;S.Johansson
- Appl. Phts. Lett. v.58 Growth of Epitaxial CoSi₂ on (100)Si M.L.A. Dass;D.B. Fraser;C.S. Wei
- J. Appl. Phys. v.70 no.12 Formation of Epitaxial CoSi₂ Films on (001) Silicon Using Ti-Co Alloy and Bi-metal Source Materials S.L. Hsia;T.Y. Tan;P. Smith;G.E. Mcguire
- Ph. D. Thesis, 서울대학교 코발트/내열금속의 이중박막을 이용한 코발트 실리사이드 박막의 형성에 관한 연구 변정수
- 한국요업학회 v.35 no.5 Co/내열금속/(100)Si 이중층 구조의 실리사이드화 권영재;이종무;배대록;강호규
- VLSI Electronics Microsture Science;Materials and Process Characterization v.6 M.-A. Nicolet;S.S. Lau;N.G.Einspruch(ed.);G.B.Larrabee(ed.)
- J. Appl. Phys. v.51 no.1 Thin Film Interaction between Titianium and Polycrystalline Silicon S.P. Muraka;D.B. Fraser
- J. Vac. Sci. Tech. v.B5 no.4 Stability of Polycrystalline Silicon-on-cobalt Disilcide-silicon Structures S.P. Muraka;C.C. Chang;A.C. Adams
- J. Vac. Sci. Tech. v.B5 no.6 Dopant Redistribution in Silicide-silicon and Silicide-polycrytstalline Silicon Bilayered Structures S.P. Muraka;D.S. Williams
- Jpn. J. Appl. Phys. v.36 Mechanism of Improved Thermal Stability of Cobalt Silicide Formed on Polysilicon Gate by Nitrogen Implantation W.-T. Sun;W.-L. Liaw;M.-C. Liaw;K.-C. Hsieh;Charles C-.H. Hsu
- J. Appl. Phys. v.60 no.1 Thermal Stability of T₁Si₂on Mono- and Polycrystalline Silicon C.Y. Wong;L.K. Wang;P.A. McFarland;C.Y. Ting