High Temperature Oxidation of Ti3Al/SiCp Composites in Oxygen

  • An, Sang-Woo (Dept. of Metallurgical & Materials Engineering, Sung Kyun Kwan Univ) ;
  • Kim, Young-Jig (Dept. of Metallurgical & Materials Engineering, Sung Kyun Kwan Univ) ;
  • Park, Sang-Whan (Multifunctional Ceramic Research Center, KIST, Seoul) ;
  • Lee, Dong-Bok (Dept. of Metallurgical & Materials Engineering, Sung Kyun Kwan Univ)
  • 발행 : 1999.03.01

초록

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

키워드

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