The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the Forward I-V Characteristics of the Separated Shorted-Anode Lateral Insulated Gate Bipolar Transistor

분리된 단락 애노드를 이용한 수평형 SA-LIGBT 의 순방향 전류-전압 특성 연구

  • Byeon, Dae-Seok (Dept.of Electric Engineering, Seoul National University) ;
  • Chun, Jeong-Hun (Dept.of Electric Engineering, Seoul National University) ;
  • Lee, Byeong-Hun (Dept.of Electric Engineering, Seoul National University) ;
  • Kim, Du-Yeong (Dept.of Electric Engineering, Seoul National University) ;
  • Han, Min-Ku (Dept.of Electric Engineering, Seoul National University) ;
  • Choi, Yeon-Ik (Dept.of Electronics Engineering, Ajou University)
  • Published : 1999.03.01
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Abstract

We investigate the device characteristics of the separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, by 2-dimensional numerical simulation. The SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The negative differential resistance regime of the SSA-LIGBT is significantly suppressed as compared with that of the conventional SA-LIGBT. The SSA-LIGBT shows the lower forward voltage drop than that of the conventional SA-LIGBT.

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References

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