질소가 도핑된 DLC 막의 물성 조사 및 Mo-tip FEA 소자에의 응용

Investigation of Physical Properties of N-doped DLC Film and Its Application to Mo-tip FEA Devices

  • 주병권 (KIST 정보재료.소자연구센터) ;
  • 정재훈 (대우고등기술연구원 전자재료연구실) ;
  • 김훈 (KIST 정보재료.소자연구센터) ;
  • 이윤희 (KIST 정보재료.소자연구센터) ;
  • 이남양 (아주대학교 평판표시연구센터) ;
  • 오명환 (KIST 정보재료.소자연구센터)
  • 발행 : 1999.01.01

초록

N-doped and low-hydrogenated DLC thin films were coated on the Mo-tip FEAs in order to improve the field emission performance and their electrical properties were evaluated. The fabricated devices showed improved field emission performance in terms of turn-on voltage, emission current and current fluctuation. This result might be caused both by the shift of Fermi level toward conduction band by N-doping and by the inherent stability of DLC material. Furthermore, the transconductance of the DLC-coated Mo-tip FEA and electrical conductivity and optical band-gap of the deposited DLC films were investigated.

키워드

참고문헌

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