펄스전착법과 첨가제를 사용하여 전착된 ULSI배선용 구리박막의 특성

Characteristics of Copper Film Fabricated by Pulsed Electrodeposition with Additives for ULSI Interconnection

펄스전착법에 의한 구리박막의 특성과 via hole 충진 특성을 연구하였다. 특히 구리박막의 특성에 미치는 첨가제의 영향을 중점적으로 다루었다. 펄스 전류와 첨가제를 사용하여 전착한 구리박막은 83.4 MPa이하의 낮은 인장응력을 가졌으며 높은 Cu (111) 우선 배향성을 나타냈다. Superfilling에 의해 최고 $0.25{\mu}m, 6: 1$ 정도의 고 종횡비를 가지는 via hole에 결함 없이 성공적으로 충진할 수 있었으며 미세 구조를 관찰한 결과 쌍정에 의한 변형이 일어났음을 알 수 있었다. $500^{\circ}C$에서 1시간 동안 진공열처리를 했을 경우 두께의 $1\~2$배에 달하는 결정립을 가지는 bamboo구조를 나타냈으며 이때 전기비저항은 $1.8\~2.0{\mu}{\Omega}{\cdot}cm$을 나타냈다.

The characteristics of copper thin films and via hole filling capability were investigated by pulsed electrodeposition method. Especially, the effects of additives on the properties of copper thin films were studied. Copper films, which were deposited by pulsed electrodeposition using commercial additives, had low tensile stress value under 83.4 MPa and high preferred Cu (111) texture. Via holes with $0.25{\mu}m$ in diameter and 6 : 1 aspect ratio were successfully filled without any defects by superfilling. It was observed that copper microstructure deformed by twining. After heat treatment at $500^{\circ}C$ for 1 k in vacuum furnace, grain size was 1 or 2 times as large as film thickness and the bamboo structure was formed. Heat treated copper films showed good resistivities of $1.8\~2.0{\mu}{\Omega}{\cdot}cm$.