센서학회지 (Journal of Sensor Science and Technology)
- 제8권3호
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- Pages.239-246
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- 1999
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
p-i-n 구조의 InSb 웨이퍼를 이용한 적외선 광다이오드의 제조 및 그 특성
Fabrication and Characteristics of Infrared Photodiode Using Insb Wafer with p-i-n Structure
- 조준영 (경북대학교 전자전기공학부) ;
- 김종석 (경북대학교 전자전기공학부) ;
- 손승현 (경북대학교 전자전기공학부) ;
- 이종현 (경북대학교 전자전기공학부) ;
- 최시영 (경북대학교 전자전기공학부)
- Cho, Jun-Young (School of Electronic and Electric Eng., Kyungpook National University) ;
- Kim, Jong-Seok (School of Electronic and Electric Eng., Kyungpook National University) ;
- Son, Seung-Hyun (School of Electronic and Electric Eng., Kyungpook National University) ;
- Lee, Jong-Hyun (School of Electronic and Electric Eng., Kyungpook National University) ;
- Choi, Sie-Young (School of Electronic and Electric Eng., Kyungpook National University)
- 발행 : 1999.05.31
초록
MOCVD로 성장된 p-i-n 구조의 InSb 웨이퍼를 이용하여
A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in
키워드