한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제35권8호
  • /
  • Pages.827-835
  • /
  • 1998
  • /
  • 1229-7801(pISSN)
  • /
  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
권호 표지

Sputter Seeding을 이용한 CVD Cu 박막의 비선택적 증착 및 기판의 영향

The Blanket Deposition and the Sputter Seeding Effects on Substrates of the Chemically Vapor Deposited Cu Films

  • 박종만 (연세대학교 세라믹공학과) ;
  • 김석 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과) ;
  • 고대홍 (연세대학교 세라믹공학과)
  • Park, Jong-Man (Dept. of Ceramic Engineering, Yonsei University) ;
  • Kim, Seok (Dept. of Ceramic Engineering, Yonsei University) ;
  • Choi, Doo-Jin (Dept. of Ceramic Engineering, Yonsei University) ;
  • Ko, Dae-Hong (Dept. of Ceramic Engineering, Yonsei University)
  • 발행 : 1998.08.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${\AA}$ and 160${\AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{\circ}C$ and 260$^{\circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{\circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${\AA}$ Cu seeded substrate was lower then that of 40 ${\AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.

키워드

참고문헌

  1. MRS Bulletin v.14 no.8 CVD of Cu from Cu(Ⅰ) Precursor in the Presence of Water Vapor A. V. Gelatos;A. Jain;R. Marsh;C. J. Mogab
  2. J. Electrochem. Soc v.144 no.8 Manufacturability of C6emical Vapor Deposition of Copper T. Nguyen;L. J. Charneski;S. T. Hsu
  3. Appl. Phys. Lett. v.60 no.1 Mecharisms of Copper Chemical V6por Deposition S. L. Cohen;M. Liehr:S. Kasi
  4. Thin Solid Films v.236 Advanced Multilayer Metallization Schemes with Copper as Interconnection Metal S. P. Murarka;R. J. Gutmann;A. E. Kaloyeros;W. A. Lanford
  5. J. Electrochem. Soc. v.140 no.II Low Pressure Chemically Vapor Deposited Copper Films for Advanced Device Metallization D. H. Kim;R. H. Wentorf;W. N. Gill
  6. J. Electrochem. Soc. v.139 no.11 Selectivity and Copper Chemical Vapor Deposition L. H. Dubois;B R. Zegarski
  7. J. Electrochem. Soc. v.140 no.5 Chemical Vapor Deposition of Copper from Hexafluoroacctylacetonate Copper(Ⅰ) Vinyltrimethylsilane A. Jain;K. M. Chi;T. T Kodas;M. J. HampdenSmith
  8. MRS Bulletin v.14 no.8 J. Li;T E. Seidel;J. W. Mayer
  9. Phy. Rev. v.B28 Compound formation and Bonding Configuration at the Si-Cu Interface G. Rossi;I Landau
  10. J. Electrochem. Soc. v.136 no.11 Chemical Vapor Deposition of Copper from Copper(Ⅱ) Hexafluoroacetylacetonate D. Temple;A. Reisman
  11. J. Appl. Phys. v.70 no.7 Preparation of Copper Thin Films at Ambient Temperature Microwave Plasma-Enhanced by Chemical Vaper Deposition from the Copper(Ⅱ) Acetylacetonate-argon-hydrogen System J. Pelletier;R. Pantel;J. C. Oberlin
  12. J. Electrochem. Soc. v.140 no.3 Copper Films Growth by Chemical Vapor Deposition B. Lecohier;B. Calpini;J. M. Plilippoz;H. V. Bergh;D. Laub;P. A. Buffat
  13. J. Appl. Phys. v.72 no.5 Low Pressure Chemical Vapor Deposition of Copper;Dependance of the Selectivity on the Water Vaper Added to a Hydrogen or Helium Carrier Gas B. Lecohier;B. Calpini;J. M. Plilippoz;H. V. Bergh
  14. Appl. Phys. Lett v.60 no.25 Selective Low Pressure Chemical Vaper Deposition of Copper Effect of Added Water Vapor in Hydrogen or Helium Carrier Gas B. Lecohier;B. Calpini;J. M. Plilippoz;H. V. Bergh
  15. J. Voc. Sct. Technol. B v.10 no.1 Selective Low Pressure Chemical Vaper Deposition of Copper and Platinum B. Lecohier;J. M. Plilippoz;H. V. Bergh
  16. New J. Chem. v.14 H. D. Caesz(et al)
  17. 한국재료학회지 v.6 no.7 ICB Seeding에 의한 CVD Cu 박막의 증착 및 특성 분석 윤경렬;최두진;김석;김기환;고석근
  18. 한국재료학회지 v.7 no.9 구리 박막의 선택적 화학 기상 증착에 대한 운반 기체의 영향과 기판 표면 처리에 의한 선택성 증진 효과 김석;박종만;최두진
  19. J. Am. Chem. Soc. v.115 Mechanistic Studies of Copper Thin-Film Growth from Cu Ⅰ and Cu Ⅱ β-Dikentonates G. S. Girolami;P. M. Jeffries;L. H. Dubois
  20. Mat. Res. Soc. Symp. Proc. v.427 Chemical Vapor Deposition of Copper Film;Influence of the Seeding Layer K. R. Yoon;S. Kim;D. J. Choi;K. H. Kim;S. K. Koh
  21. J. Electrochem. Soc, v.139 On the Texture of Electroless Copper Films on Epitaxial Cu Seed Layers Grown on Si(100) and Si(111) Substrate J. Li;Y. Shacham-Diamond
  22. J. Mat. Sci. Mat. m. Electromics v.7 Using Coopper(Ⅰ)Hhexafluoroacetylacetonate Trimethylvinylsilane W. L. Lee;J. S. Min;S. K. Rha;S. S. Chun
  23. The Materials Science of Thin Films M. Ohring
  24. J. Vac. Sci. Technol. A v.6 Control of Microstructure and Properties of Copper Films Using Ionassisted Deposition R. A. Roy, J. J. Cuomo;D. S. Yee
  25. J. Vac. Sci. Technol. A v.13 no.2 A New Method to Obtain Cu Films with lower Resistivity and Higher Interface Adhesion on Different Substrate J. Yang;C. Wang;K. Tao;Y. Fan