Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A study of the fabrication of AlGaAs/GaAs HBT with an air-bridge isolation structure induced by isotropic undercut etching

등방성 언더컷 식각에 의한 에어-브리지 소자 격리 구조를 갖는 AaGaAs/GaAs HBT의 제작에 관한 연구

  • 김연태 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막기술연구소) ;
  • 이제희 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막기술연구소) ;
  • 윤상호 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막기술연구소) ;
  • 권오섭 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막기술연구소) ;
  • 반용찬 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막기술연구소) ;
  • 원태영 (인하대학교 전자전기컴퓨터공학부 반도체 및 박막기술연구소)
  • Published : 1998.05.01
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Abstract

This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

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