Integration of 5-V CMOS and High-Voltage Devices for Display Driver Applications

  • Published : 1998.03.31

Abstract

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

Keywords

References

  1. Proc. of 16th Conf. on SSDM 350 V Analog-Digital Compatible Power IC Technologies Kimura, M.
  2. Symp. on VLSI Tech. Digest of Tech. Papers A Resurf High-Voltage NMOS Device Fully Compatible with a Low Voltage $0.8{\mu}m$ BiCMOS Technology Sakamoto, K.
  3. SID82 Digest Power IC Technology Blanchard, B.A.
  4. Modern Power Device Baliga, B.J.
  5. Power MOSFETs Grant, D.A.;Gowar, J.
  6. IEEE Trans. Electron Devices v.38 An Overview of Smart Power Technology Baliga, B.J.
  7. Proceedings of IVMC'97 Integration of High Voltage LDMOSFETs into a Low Voltage CMOS Technology for Display's Driving Circuit Applications Kim, J.D.;Park. M.Y.;Kang, J.Y.;Lee, S.Y.;Koo, J.G.;Cho, K.I.;Nam, K.S.
  8. IEEE IEDM Digest Thin Layer High-Voltage Devices (RESURF Devices) Apples, J.A.;Vaes, H.M.J.
  9. DESSIS User's Manual ISE