Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)
- Volume 7 Issue 2
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- Pages.185-190
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- 1997
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
6H-SiC single crystal growth by the sublimation method : (I) the formation mechanism of growth defects
승화법에 의한 6H-SiC 단결정 성장 : (I) 성장결함생성기구
- Kim, Hwa-Mok (Department of Ceramic Engineering, Hanyang University) ;
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Kang, Seung-Min
(YoungDo Research Institute) ;
- Joo, Kyoung (YoungDo Research Institute) ;
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Shim, Kwang-Bo
(Department of Ceramic Engineering, Hanyang University) ;
- Auh, Keun-Ho (Department of Ceramic Engineering, Hanyang University)
- Published : 1997.05.01
Abstract
The 6H-SiC single crystals were grown using a self-designed crystal grower by the sublimation method. The grown crystals were typically 30 mm in diameter and 10 mm in length. Optimum growth conditions were established as follows : the temperature of the raw material was
승화법에 의한 단결정 성장장치를 자체 제작하여 직경 약 30 mm, 길이 약 10 mm의 6H-Sic 단결정을 성장하였다. 최적의 성장조건은 원료온도
Keywords