참고문헌
- ISSCC Digest of Technical Papers A 3.3V 16Mb Flash Memory with Advanced Write Automation Baker,A.(et al.)
- IEDM Digest of Technical Papers A 2.3 μmm2 cell structure for 16Mb NAND EEPROMS R.Shirota(et al.)
- 플래시 메모리 성장 시나리오 조사보고서 DataQuest Japan
- ISSCC Digest of Technical Papers A 34Mb 3.3V serial flash EEPROM for solid state disk applications R.Cernea(et al.)
- IEEE J. Solid-State Circuits v.31 no.11 117 mm2 3.3V Only 128Mb Multilevel NAND Flash Memory for Mass Storage Applications T.S.Jung(et al.)
- Market Statistics Worldwide MOS Memory Forecast Update DataQuest
- 일경 Microdevices