E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제10권1호
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- Pages.61-67
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- 1997
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
졸-겔법에 의한$ Ta_2$ $O_5$ 박막의 전기적 특성
Electric properties of $ Ta_2$ $O_5$ thin films by sol-gel method
초록
We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta