The Korean Journal of Ceramics

한국세라믹학회 (The Korean Ceramic Society)
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X-ray and Plasma Process Induced Damages to PLZT Capacitor Characteristics for DRAM Applications

  • Kim, Jiyoung (School of Metallurgical & Materials Engineering, Kookmin University)
  • 발행 : 1997.09.01
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초록

In this paper, the imparct of X-ray and plasma process-induced-damages to La doped Lead Zirconate Titanate (PLZT, (Pb1-xLa)(Zr0.5Ti0.5)O3) capacitor characteristics have been investigated from the viewpoint of gigabit scale dynamic random access memory (DRAM) applications. Plamsa damage causes asymmetric degradation on hysteresis characteristics of PLZT films. On the other hand, X-ray damage results in a symmetrical reduction of charge storage densities (Qc's) for both polarities. As La concentration increases in the films, the radiation hardness of PLZT films on X-ray and plasma exposures is improved. It is observed that the damaged devices are fully recovered by thermal annealing under oxygen ambient.

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참고문헌

  1. Integr. Ferroelectr. v.16 A Review of High Dielectric Materials for DRAM Capacitors D. Kotecki
  2. 1997 Symp. VLSI Tech. Digest. The Simplest Stacked BST Capcitor for the Future DRAMs Using a Novel Low Temperature Growth Enhanced Crystallization S. Takehiro;S. Yamauchi;M. Yoshimaru;H. Onoda
  3. Solid State Tech. v.40 no.5 Issues in Advanced Lithography K. Derbyshire
  4. 1996 IEDM Tech. Digest. 240 nm Pitch 4GbDRAM Array MOSFET Technologies with X-ray Lithography K. Sunouchi;H. Kawaguchiya;S. Matsuda;H. Nomura;T. Shino;K. Murooks;S. Sugihara;K. Kondo;Y. Kikuchi;K. Deguchi;M. Fukuda;M. Oda;S. Uchiyama;T. Watanabe;K. Yamada
  5. Thin Solid Films v.270 Ferroelectric Non-volatile Memories for Low-voltage, Low Power Applications R. Jones, Jr.;P. Maniar;R. Moazzami;P. Zurcher;J. Witowski;Y. Lii;P. Chu;S. Gillespie
  6. Mat. Res. Symp. Proc. v.310 Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics P. D. Maniar;R. Moazzami;R. E. Jones;A. C. Campbell;C. J. Mogab
  7. Jap. J. Appl. Phys. v.36 no.5A Etching Effects on Ferroelectric Capacitors with Multilayered Electrodes C. Chung;C. Kim
  8. J. Korean Ceram. Soc. The Effects of La Doping on Characteristics of PLZT Thin Films for DRAM Capacitor Applications J. Kim
  9. Appl. Phys. Lett. v.60 no.8 Electrical Characteristics of Paraelectric Lead Zirconate Titanate Thin Films for Dynamic Random Access Memory Application R. Jones;P. Maniar;J. Olowolafe;A. Campbell;C. Mogab
  10. J. Vac. Sci. Technol. B. v.11 no.4 Effect of La Doping on the Electrical Properties of Sol-gel Derived Ferroelectric PZT for ULSI DRAM Application C. Sudhama;J. Kim;J. Lee;V. Chikarmane;W. Shepherd;E. Myers
  11. IEEE Elect. Dev. Lett. v.15 no.4 Effects of Nonlinear Storage Capacitor on DRAM READ/WRITE B. Jiang;C. Sudhama;R. Khamankar;J. Kim;J. Lee
  12. J. Appl. Phys. v.70 no.5 Modelling Ferroelectric Capcitor Switching with Asymmetric Nonperiodic Input Signals and Arbitary Initial Conditions S. Miller;J. Schwark;R. Nasby;M. Rodgers
  13. Integr. Ferroelectr. v.16 Modeling Ferroelectric Capacitor Switching Using a Parallel-elements Model B. Jiang;J. Lee;P. Zurcher;R. Jones
  14. Mat. Res. Soc. Symp. Proc. v.433 Voltage Shifts and Defect-dipoles in Ferroelectric Capacitors W. Warren;G. Pike;D. Dimos;K. Vanheusden;H. Al-Shareef;B. Tuttle;R. Ramesh;J. Evans, Jr.
  15. 1989 IEDM Tech. Digest. Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film for DRAM Applications J. Carrano;C. Sudhama;J. Lee;A. Tasch;W. Miller
  16. Mat. Res. Soc. Symp. Proc. v.361 Mechanisms for the Suppression of the Switchable Polarization in PZT and BaTiO₃ W. Warren;D. Dimos;B. Tuttle;G. Pike;M. Raymond;R. Nasby;R. Ramesh;J. Evans, Jr.
  17. J. Appl. Phys. v.44 no.8 Radiation Effects on Ferroelectric Thin-film Memories: Retention Failure Mechanisms J. F. Scott
  18. Appl. Phys. Lett. v.63 no.11 Shallow $Pb^{3+}$ Hole Traps in Lead Titanate Ferroelectrics J. Robertson;W. L. Warren;B. A. Tuttle;D. Dimos;D. M. Smyth
  19. Appl. Phys. Lett. v.64 no.7 Photo-induced Hysteresis Changes and Trapping in BaTiO₃Dielectrics W. L. Warren;D. Dimos