Microstructure Characteristics of ZnO of ZnO Varistors Simulated by Voronoi Network

  • Han, Se-Won (Division of Electrical, Korea Electrotechnology Research Institute) ;
  • He, Jin-Liang (Department of Electrical Engineering, Tsinghua University) ;
  • Hwang, Hui-Dong (Department of Electrical Engineering, Hanyang University) ;
  • Kang, Hyung-Boo (Department of Electrical Engineering, Hanyang University)
  • Published : 1997.12.01

Abstract

The Voronoi network can be used to effectively simulate the microstructure of ZnO varistors. The nonuniformity in microstructure of simulated ZnO varistor can be changed by setting different disorder degree of Voronoi network. In the region of disorder degree larger than 3 where the simulated microstructures are similar to those the actual ones of ZnO varistors, a chaotic phenomenon exists in the microstructure characteristics. This chaotic property can simulate the original behavior of nonuniformity of electrical characteristics caused by microstructures of ZnO varistors.

Keywords

References

  1. J. Appl. Phys. v.50 no.2 Direct Determination of Barrier Voltage in ZnO Varistors J.T.C. Kemenade;R.K. Eijinthoven
  2. Appl. Phys. Lett. v.34 no.11 Direct Observation of Voltage Barriers in ZnO Varistors O.L. Krivanek;P. Williams
  3. J. Appl. Phys. v.47 no.11 Barrier Voltage Measurement in Metal Oxide Varistors J. Wong
  4. J. Appl. Phys. v.61 no.4 Different Single Grain Junctions Within a ZnO Varistor M. Tao;Bui Ai;O, Dorlanne;A. Loubiere
  5. Jpn. J. Appl Phys. v.34 no.4A Single Juction in ZnO Varistors Studied by Current-Voltage Characteristics and Deep Lebel Transient Sepectroscopy H. Wang;W. Li;J. F. Cordaro
  6. J. Am. Ceram. Soc. v.79 no.12 Effect of Variation in Grain Size and Grain Boundary Barrier heights on the Current-Voltage Characteristics of ZnO Varistors C.W. Nan;D.R. Clarke
  7. J. Appl. Phys. v.50 no.11 Statistics and Grain Size in Zine Oxide Varistors P.R. Entage
  8. J. Phys. Rev. v.B51 no.16 Nonlinear Currents in Voronoi Network M. Bartkowiak;G.D. Mahan
  9. Adv. Ceram. Matter. v.2 no.4 Effect of Grain-Size Distribution on the Barrier Voltage of ZnO Varistors G.Y. Sung;C.H. Kim;M.H. Oh
  10. Acta Phys. Sinica v.36 no.10 A Microstructure-Physical Model of Sensitive Semioconductor Ceramics C.W. Nan
  11. Physica B.(Amsterdam) v.179 no.3 Non-linear Ⅰ-Ⅴ Characteristics of Double Schottky Barriers and Polycrystalline Semiconductors E. Canessa, V.L.Nguyen
  12. Jpn. J. Appl. Phys. v.35 no.4A Multiple-Peaked Structure in the Nonlinearity Coefficient of ZnO Varistors M. Bartkowiak;G.D. Mahan;F.A. Modine;M.A. Alim
  13. J. Am. Ceram. Soc. v.76 no.5 Electrical Nonuniformity of Grain Boundaries Within ZnO Varistors H.T. Sun;L.Y. Zhang;X. Yao
  14. J. Comp. Phys. v.32 no.2 Construction of Voronoi Polyhedra W. Brostow;J. Dussault;B.L. Fox
  15. J. Comp. Phys. v.32 no.1 A Procedure for the Construction of Voronoi Polyhedra J.L. Finney
  16. Phys. Rev. B. v.46 no.22 Conductance of Two-Dimensional Disordered Voronoi Networks A. Priolo;H.M. Jaeger;A.J. Dammers;S. Radelaar
  17. Chaos:Making a New Science J. Gleik
  18. The Essence of Chaos E. Lorenz