전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제34D권12호
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- Pages.54-61
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- 1997
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- 1226-5845(pISSN)
RF용 Silicon MOSFET 등가회로 모델의 변수추출에 관한 연구
A study on parameter extraction for equivalent circuit model of RF silicon MOSFETs
초록
An accurate extraction technique is developed to determine full euqivalent circuit parameters of Si MOSFETs using 1 set of measured S-parametes without complicated optimization process. This technique is based on the use of anlytic Z-parameters experessions for resistances and inductances and the Y-parameter ones for ntrinsic parameters. This accuracy is proved over the wide range of gate voltage by observing good agreement between measured and fitted Z-parameter equations and frequency-independent response of the extracted intrinsic parameters. Using this technique, gate voltage-dependencies of model parameters are obained in the saturation region and these results show the similar behavior to the short-channel effects expected from the device theory.
키워드