전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제34D권12호
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- Pages.39-45
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- 1997
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- 1226-5845(pISSN)
Hot-Carrier 현상에 의한 Folded-Cascode CMOS OP-Amp의 성능 저하
The performance degradation of a folded-cascode CMOS op-amp due to hot-carrier effects
초록
This study presents the first experimental data for the impact of hot-carrier degradtion on the performance of CMOS folded-cascode op-amps. A folded-cascode op-amp which has an NMOS input pair has been designed and fabricated using a 0.8.mu.m single-poly, double-metal CMOS process. After high voltage stress, the degradtion of perfomrance parameters such as open-metal CMOS process. After high voltage stress, the degradation of performance parameters such as open-loop voltage gain, unity-gain frequency and phase margin has been analized and physically explaniend in terms of hot carrier degradation.
키워드