Single-bias GaAs MMIC single-ended mixer for cellular phone application

Cellular phone용 단일 전원 MMIC single-ended 주파수 혼합기 개발

  • 강현일 (한양대학교 전자공학과 전자 재료 및 부품 연구센터) ;
  • 이상은 (한양대학교 전자공학과 전자 재료 및 부품 연구센터) ;
  • 오재응 (한양대학교 전자공학과 전자 재료 및 부품 연구센터) ;
  • 오승건 (국제상사 전자사업본부) ;
  • 곽명현 (국제상사 전자사업본부) ;
  • 마동성 (국제상사 전자사업본부)
  • Published : 1997.10.01

Abstract

An MMIC downconverting mixer for cellular phone application has been successfully developed using an MMIC process including $1 \mu\textrm{m}$ ion implanted gaAs MESFET and passive lumped elements consisting of spiral inductor, $Si_3N_4$ MIM capacitor and NiCr resistor. The configuration of the mixer presented in this paper is single-ended dual-gate FET mixer with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit is $1.4 mm \times 1.03 mm $ including all input matching circuits and a mixing circuit. The conversion gian and noise figure of the mixer at LO powr of 0 dBm are 5.5dB and 19dB, respectively. The two-tone IM3 characteristics are also measured, showing -60dBc at RF power of -30dBm. Allisolations between each port show better than 20dB.

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