전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제34D권8호
- /
- Pages.35-40
- /
- 1997
- /
- 1226-5845(pISSN)
짧은 채널 효과의 억제를 위한 ISRC (Inverted-Sidewall Recessed-Channel)구조를 갖는 0.1$\mu\textrm{m}$ nMOSFET의 특성
Supperession of Short Channel Effects in 0.1$\mu\textrm{m}$ nMOSFETs with ISRC Structure
초록
To suppress the short channel effects in nMOSFET with 0.1.mu.m channel length, we have fabricated and characterized the ISRC n MOSFET with several process condition. When the recess oxide thickness is 100nm and the channel dose for threshold voltge adjustment is 6*10
키워드