Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 4
- /
- Pages.27-32
- /
- 1997
- /
- 1226-5845(pISSN)
I-V characteristics of resonant interband tunneling diodes with single quantum well structure
단일 양자 우물 구조로 된 밴드간 공명 터널링 다이오드의 전류-전압 특성
Abstract
In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current desnity (
Keywords