Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 4
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- Pages.17-26
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- 1997
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- 1226-5845(pISSN)
A new MeSFET channel current model including bias-dependent dispersion effect
바이어스 효과를 포함하는 GaAs MESFET의 새로운 비선형 채널전류 모형
Abstract
A enw channel current model of GaAs MeSFET suitagle for applications to microwave CAD has been developed. The current model includes the bias-dependent frequency dispersion effects and its parameters are extracted from the pulsed I-V measurements at several quiescent bias points. The model is verified by applying to the nonlinear circuit designs of power amplifier and MMIC mixer.
Keywords