Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Characteristics of PLT Thin Films on MgO Substrates and Fabrication of Infrared Sensor

MgO 기판 위에 올린 PLT 박막의 특성과 적외선 센서의 제작

  • Cho, Sung-Hyun (Hyundai Electronics Co. Ltd.) ;
  • Jung, Jae-Mun (LG Electronics Co. Ltd.) ;
  • Lee, Jae-Gon (Sensor Technology Research Center, Kyungpook Nat'l Univ.) ;
  • Kim, Ki-Wan (School of Electronic & Electrical Engineering, Kyungpook Nat'l Univ.) ;
  • Hahm, Sung-Ho (School of Electronic & Electrical Engineering, Kyungpook Nat'l Univ.) ;
  • Choi, Sie-Young (School of Electronic & Electrical Engineering, Kyungpook Nat'l Univ.)
  • Published : 1997.05.31
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Abstract

The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using PbO-rich target with varing La contents. The substrate temperature, working pressure, $Ar/O_{2}$, and RF power density of PLT thin films were $580^{\circ}C$ 10mTorr, 10/1, and $1.7W/cm^{2}$, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above $1.71{\mu}C/cm^{2}$ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.

La 조성이 $5{\sim}15%$이고 PbO과잉인 PLT 타겟을 이용하여 MgO(100) 단결정 기판위에 고주파 마그네트론 스펏터링법으로 PLT 박막을 제조하였으며, 고온 XRD 분석을 하였다. 제조조건은 기판온도를 $580^{\circ}C$, 분위기압을 10mTorr, 고주파 전력밀도를 $1.7W/cm^{2}$ 및 $Ar/O_{2}$를 10/1로 하였을 때 PLT 박막들은 La 농도가 증가할수록 c-축 성장율과 정방정형성(c/a)이 감소하였고 확산형 상전이 특성을 나타내었다. 이러한 PLT 박막을 이용하여 초전형 적외선 센서를 제조하였으며, 이력특성과 광특성을 측정하였다. 제조된 적외선 센서는 $1.71{\mu}C/cm^{2}$ 이상의 잔류 분극도를 보였고 500 mV이상의 초전전압을 보였으며 신호대 잡음비는 10:1 이하로 낮았다.

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