Journal of Sensor Science and Technology (센서학회지)
- Volume 6 Issue 3
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- Pages.180-187
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- 1997
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Sensitivity Improvement and Operating Characteristics Analysis of the Pressure Sensitive Field Effect Transistor(PSFET) Using Highly-Oriented ZnO Piezoelectric Thin Film
- Lee, Jeong-Chul (Korea Institute of Energy Research) ;
- Cho, Byung-Woog (School of Electronic and Electrical Eng., Kyungpook Nat'l Univ.) ;
- Kim, Chang-Soo (Sensor Technology Research Center, Kyungpook Nat'l Univ.) ;
- Nam, Ki-Hong (Dept. of Electronics Eng. Kyungil Univ.) ;
- Kwon, Dae-Hyuk (Dept. of Electronics Eng. Kyungil Univ.) ;
- Sohn, Byung-Ki (School of Electronic and Electrical Eng., Kyungpook Nat'l Univ.)
- Published : 1997.05.31
Abstract
We demonstrate the improvement of sensitivity and analysis of operating characteristics of the piezoelectric pressure sensor using ZnO piezoelectric thin film and FET(field effect transistor) for sensing applied pressure and transforming the pressure into electrical signals, respectively. The sensitivity of the PSFET(pressure sensitive field effect transistor) was improved by using highly-oriented ZnO film perpendicular to the substrate surface and the operating characteristics was investigated by monitoring output voltage with time in various static pressure levels.
Keywords