한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제29권1호
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- Pages.3-14
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
텅스텐 실리사이드 박막 들뜸에 관한 연구
A study of WSi$_2$ film peeling off from Si substrate
초록
High temperature anneal of W-rich silicides, inferior to adherence compared with Si-rich silicides, resulted in the film peeling off from the Si-substrate when WSix thickness reached more than critical thickness. Investigation of the W-rich silicide films peeling off from the substrate revealed that the voids underneath the
키워드