The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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Analysis of a Distributed Mixer Using Dual-gate MESFETSs

Dual-gate MESFET를 사용한 분포형 혼합기 해석에 관한 연구

  • 김갑기 (건국대학교 전자공학과) ;
  • 오양현 (목포해양대학교 전자통신공학부) ;
  • 정성일 (목포해양대학교 전자통신공학부) ;
  • 이종익 (목포해양대학교 전자통신공학부)
  • Published : 1996.06.01
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Abstract

In this paper, a theoretical analysis of a wide band distributed mixer using a dual-gate GaAs MESFET's(DGFET) is introduced. Based on low noise mixer mode(LNM) region modeling of DGFET, variation of g/sub m/ and conversion gain are presented versus bias. The distributed mixer is composed of drain and gate transmission line, m-derived image impedance matching circuits at each input and output port, and DGFET's. Through computer simulation, wide-band characteristics of designed distributed mixer are confirmed. And, it is certificated that LO/RF isolation between gate 1 and gate 2 is obtained more than 15dB.

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