E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제9권3호
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- Pages.291-297
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- 1996
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Al(Si, Cu)합금막의 플라즈마 식각후 표면 특성
Surface properties of Al(Si, Cu) alloy film after plasma etching
초록
The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl