두 단계 열처리에 의해 제작된 다결정 실리콘 박막트랜지스터의 전기적 특성의 분석

Analysis of electrical properties of two-step annealed polycrystalline silicon thin film transistors

  • 발행 : 1996.04.01

초록

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

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